•연구자: 물리학과 오홍석
•발표일: 2022.05.27
•DOI: https://doi.org/10.35848/1882-0786/ac7032
•Yeojin Lee et al., Applied Physics Express (Q2), Volume 15, Number 6 (2022)
•Abstract
We report the fabrication and characterization of indium gallium zinc oxide (IGZO)-based synaptic thin-film transistors. Radio-frequency (RF) magnetron-sputtered AlOx thin films are embedded in the IGZO channel as charge-trapping layers to provide synaptic behavior. The voltage pulse introduced at the gate electrodes traps or de-traps charges in the embedded AlOx layer thus modulates the channel current, which in turn leads to the ability to mimic biological synaptic behaviors such as excitonic postsynaptic current, paired-pulse facilitation, and potentiation and depression. Simulation results suggest that the device can perform properly as a synaptic unit in an artificial neural network.