논문특허 4차년도
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[논문] 양자나노물성: Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and Characterization of its Compensated Positive Bias Stress Properties
•연구자: 물리학과 오홍석
•발표일: 2024.10.29
•DOI: https://doi.org/10.1007/s42341-024-00575-8
•Yedam Lee et al., Transactions on Electrical and Electronic Materials (Q4), Online Published (2024)
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